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Quantum Well Structures for Infrared Photodetection
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Authors: Wei Shi (Qualcomm Inc., San Diego, CA) and D.H. Zhang (School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore) 
Book Description:
This new book studies the electrical, optical and structural properties of the Be-oped GaInAs/AlGaAs multiple quantum-well structures (MQWs) at different doping density in the GaInAs well, both designed and fabricated in house. The higher Be-doping density in the wells was found to enhance the compressive strain and increase barrier height of the GaInAs/AlGaAs MQWs through extensive optical characterization. It caused the shifts of the sub-energy levels in the valence band of the well material and the absorption wavelength resulting from the intersubband absorption. These observations were verified by theoretical calculation based on the six-band Luttinger-Kohn model by taking the Be-doping into account.

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Table of Contents:
ABSTRACT

1. INTRODUCTION, pp. 1-4

2. THEORETICAL REVIEW, pp. 5-14

3. P-DOPED GAINAS/ALGAAS STRAINED MULTIPLE QUANTUM WELLS, pp. 15-47

4. QUANTUM WELL INFRARED PHOTODETECTORS, pp. 49-62

5. CONCLUSION, pp. 63-64

ACKNOWLEGMENTS, pp. 65-72

INDEX

   Series:
      Lasers and Electro-Optics Research and Technology
   Binding: Softcover
   Pub. Date: 2011
   Pages: 6 x 9
   ISBN: 978-1-61668-368-9
   Status: AV
  
Status Code Description
AN Announcing
FM Formatting
PP Page Proofs
FP Final Production
EP Editorial Production
PR At Prepress
AP At Press
AV Available
  
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Quantum Well Structures for Infrared Photodetection