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Silicon Carbide: New Materials, Production Methods and Applications $245.00
Editors: Sofia H. Vanger
Book Description:
Silicon Carbide (SiC) is well known for its excellent material properties, high durability, high wear resistance, light weight and extreme hardness. This combination of properties makes them ideal candidates for tribological, semiconductor and MEMs, and optoelectronic applications. However, SiC is also known for its low fracture toughness, extreme brittleness and poor machinability. This book presents topical research data in the study of silicon carbide, including the etching and thin film formation of silicon carbide using highly reactive gases; production and characterization of SiC particles; microstructure of silicon carbide nanowires; ductile regime material removal of silicon carbide; limitation of SiC in the liquid-state processing of Al-MMC; and the effects of ion implantation in silicon carbide. (Imprint: Nova Press)

Table of Contents:
Preface

Etching and Thin Film Formation of Silicon Carbide using Highly Reactive Gases, pp. 1-56
(Hitoshi Habuka, Department of Chemical and Energy Engineering, Yokohama National University, Tokiwadai, Hodogaya, Yokohama, Kanagawa, Japan)

Silicon Carbide Particulate Reinforced Aluminum Alloys Matrix Composites Fabricated by Squeeze Casting Method, pp. 57-107
(Adem Onat, Sakarya University, Vocational School of Sakarya, Sakarya, Turkey)

Microstructure of Silicon Carbide Nanowires, pp. 109-139
(Ryan Rich, Monika Wieligor, T.W. Zerda, Department of Physics and Astronomy, TCU, Fort Worth, Texas, USA)

Ductile Regime Material Removal of Silicon Carbide (SiC), pp. 141-167
(Deepak Ravindra, John Patten, Manufacturing Research Center, Western Michigan University, Kalamazoo, Michigan, USA)

Computer Simulation on the Nanomechanical Properties of SiC Nanowires, pp. 169-190
(Zhiguo Wang, Xiaotao Zu, Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, P.R. China)

Potentialities and Limitations of SiC in the Liquid-State Processing
of Al-MMCs, pp. 191-205
(M.I. Pech-Canul, Centro de Investigación de Estudios Avanzados del IPN Unidad Saltillo, Carr. Saltillo-Monterrey, Ramos Arizpe Coah, Mexico)

Effects of Ion Implantation in Silicon Carbide, pp. 207-222
(S. Leclerc, M.F. Beaufort, A. Declémy, J.F. Barbot, Institut Prime, Département Physique et Mécanique des Matériaux, CNRS - Université de
Poitiers - ENSMA, Poitiers, France)

Recent Progress in the Preparation Technologies for Silicon Carbide Nanomaterials, pp. 223-236
(S.B. Mishra, A.K. Mishra, Department of Chemical Technology, University of Johannesburg, Doornfontein, Johannesburg, South Africa)

Conversion of Silicon Carbide to Crystalline Fullerite, pp. 237-247
(Vadym G. Lutsenko, V. I. Vernadski Institute of General and Inorganic Chemistry, Ukrainian National Academy of Sciences, Kyiv, Ukraine)

Index

   Series:
      Materials Science and Technologies
   Binding: ebook
   Pub. Date: 2011
   Pages: 7 x 10 (NBC - R)
   ISBN: 978-1-61122-678-2
   Status: AV
  
Status Code Description
AN Announcing
FM Formatting
PP Page Proofs
FP Final Production
EP Editorial Production
PR At Prepress
AP At Press
AV Available
  
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