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Nanophysics, Nanoclusters and Nanodevices
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Editors: Kimberly S. Gehar
Book Description:
Nanotechnology is a 'catch-all' description of activities at the level of atoms and molecules that have applications in the real world. A nanometer is a billionth of a meter, about 1/80,000 of the diameter of a human hair, or 10 times the diameter of a hydrogen atom. Nanotechnology is now used in precision engineering, new materials development as well as in electronics; electromechanical systems as well as mainstream biomedical applications in areas such as gene therapy, drug delivery and novel drug discovery techniques. This book presents the latest research in this frontier field.

Table of Contents:

Chapter 1: Nanotribology and Biomaterials: New Challenges for Atomic Force Microscopy, pp. 1-38;
Mario D'Acunto(University of Pisa, Italy)

Chapter 2: Dynamical Symmetries in Nanophysics, pp. 39-86;
K. Kikoin(Ben-Gurion University of the Negev, Israel)
, M.N. Kiselev and Y. Avishai

Chapter 3: Composition Analysis of Single GeSi/Si Nanoclusters by Scanning Auger Microscopy, pp. 87-123;
G.A. Maximov(University of Nizhny Novgorod, Russia), Z.F. Krasil'nik, A.V. Novikov, V.G. Shengurov, D.O. Filatov, D.E. Nikolitchev, V.F. Dryakhlushin, K.P. Gaikovich

Chapter 4: Breakdown Spot Electrical Properties at the Nanoscale and their Impact on the Post-Breakdown Performance of MOS Devices, pp. 125-139;
M. Porti(Universitat Autonoma de Barcelona, Spain), R. Fernandez, R. Rodriguez, M. Nafria and X. Aymerich

Chapter 5: The Application of Molecular Dynamics Simulation to Nanotechnology and Related Experiments, pp. 141-182;
Te-Hua Fang(National Formosa University, Taiwan) and Win-Jin Chang(Kun Shan University, Taiwan)

Chapter 6: Computing and Superconducting Circuits of Josephson Junctions, pp. 183-218;
Jie Han and Pieter Jonker(Delft University of Technology, The Netherlands)

Chapter 7: Deconvolution-Optimized Probe Tip Design Considerations for Improving Magnetic Force Microscopy Resolution, pp. 219-243;
Frank M. Candocia(Florida International University, FL) and Sakhrat Khizroev

Chapter 8: Phonon-Plasmon Coupling Models in Tunneling Thin GaAs/AlAs(311) and (001) SLs: Raman Studies and Modeling, pp. 245-281
V.A. Volodin(Institute of Semiconductor Physics SB RAS, Russia), M.D. Efremov and V.A. Sachkov


      Nanotechnology Science and Technology
   Binding: Hardback
   Pub. Date: 2006
   ISBN: 1-59454-852-8
   Status: AV
Status Code Description
AN Announcing
FM Formatting
PP Page Proofs
FP Final Production
EP Editorial Production
PR At Prepress
AP At Press
AV Available
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