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Graphene and Carbon Nanotube Field Effect Transistors $110.00
Editors: Thomas H. Caine
Book Description:
This book describes initial efforts, as part of the new Strategic Technology Institute (STI) on carbon electronics, to model and simulate the performance of graphene field-effect transistors (FETs) using macroscopic descriptions that are classical for semiconductor devices. It is argued that the underlying physics that differentiates these devices from their normal semiconductor-based counterparts is most clearly revealed by non-computer-intensive descriptions that allow the designer to compare their behavior with that of their well-studied semiconductor counterparts. Because it admits a reasonable description of both the lateral and vertical field and transport functionality of the FET structure, the gradual-channel approximation is key to this approach. (Imprint: Nova)

Table of Contents:
Preface

Chapter 1: Classical Gradual-Channel Modeling of Graphene Field-Effect Transistors (FETs) (pp. 1-54)
(Frank Crowne, Army Research Laboratory)

Chapter 2: Differential Amplifier Circuits Based on Carbon Nanotube Field Effect Transistors (CNTFETs) (pp. 55-70)
(Matthew Chin, Stephen Kilpatrick, Army Research Laboratory)

Chapter 3: Effects of Differing Carbon Nanotube Field-Effect Transistor Architectures (pp. 71-85)
(Andrew M. Dorsey, Matthew H. Ervin, Army Research Laboratory)

Chapter 4: Solution Deposition Methods for Carbon Nanotube Field-Effect Transistors (pp. 87-108)
(Natalie Salaets, Matthew Ervin, Army Research Laboratory)

Chapter Sources (pp. 109)

Index

   Series:
      Materials Science and Technologies
   Binding: ebook
   Pub. Date: 2011
   Pages: 6 x 9 (NBC - G) pp. 115
   ISBN: 978-1-53611-637-3
   Status: AV
  
Status Code Description
AN Announcing
FM Formatting
PP Page Proofs
FP Final Production
EP Editorial Production
PR At Prepress
AP At Press
AV Available
  
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Graphene and Carbon Nanotube Field Effect Transistors