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Physical Properties of the Low-Dimensional A3B6 and A3B3C62 Compounds
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Authors: Alexander M. Panich ( Ben-Gurion University of the Negev, Israel; Rauf M. Sardarly (Institute of Radiation Problems, National Academy of Sciences of Azerbaijan, Azerbaijan) 
Book Description:
The authors present the first monograph on electronic properties, lattice dynamics and phase transitions in TlX and TlMX2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional 򤯔 and A3B3C62 semiconductors possessing chain or layered structure. They are of significant interest because of highly anisotropic properties, semiconductor and photoconductor behavior, non-linear effects in their current-voltage characteristics (including a region of negative differential resistance), switching and memory effects, second harmonic optical generation, ferroelectricity, relaxor behavior and potential applications in optoelectronic devices. We review (i) crystal structure of the compounds, (ii) their transport properties under ambient conditions, (iii) experimental studies of the electronic structure, (iv) band structure calculations, (v) transport properties, semiconductor-metal phase transitions and band structure under high pressure, (vi) ferroelectric/structural phase transitions at ambient pressure, soft modes and incommensurate states, (vii) electronic nature of the ferroelectric phase transitions, (viii) lattice dynamics in 򤯔 and A3B3C62 crystals and their solid solutions, (ix) elastic properties and (x) recently discovered relaxor behavior, nanodomains and quantum dots in doped and irradiated crystals. Physical properties of some related low-dimensional compounds are also discussed. New perspectives in studying and application of the aforementioned semiconductors are considered. The monograph is addressed to physicists, materials scientists, engineers and students who are interested in physics of the low-dimensional compounds, lattice dynamics, phase transitions and ferroelectricity.


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Table of Contents:
Preface

Acknowledgements

1. Crystal structure at ambient conditions pp. 1-10

2. Transport properties under ambient conditions pp. 11-20

3. Experimental studies of the electronic structure pp. 21-36

4. Band structure calculations pp. 37-58

5. Transport properties and semiconductor-metal phase transitions under high pressure pp. 59-77

6. Phase transitions in chain-type crystals under ambient pressure pp. 79-85

7. Ferroelectric phase transitions and incommensurate states in the layered crystals pp. 87-131

8. Relaxor behavior and nanodomain structure of doped and irradiated TlInS2 crystals pp. 133-148

9. Lattice dynamics in 򤯔 and 򤯑62 COMPOUNDS WITH TlSe-TYPE STRUCTURE pp. 149-177

10. Vibration spectra of mixed crystals (solid solutions) of 򤯔 and 򤯑62 compounds pp. 181-228

11. Elastic properties of low-dimensional compounds pp. 229-249

12. Related low-dimensional compounds pp. 253-270

13. Eventual applications of TlX and TlMX2 compounds pp. 271-275

Conclusion

Index

   Series:
      Condensed Matter Research and Technology
   Binding: Hardcover
   Pub. Date: 2011 - 1st Quarter
   Pages: 287 pp.
   ISBN: 978-1-60876-120-3
   Status: AV
  
Status Code Description
AN Announcing
FM Formatting
PP Page Proofs
FP Final Production
EP Editorial Production
PR At Prepress
AP At Press
AV Available
  
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Physical Properties of the Low-Dimensional A<sup>3</sup>B<sup>6</sup> and A<sup>3</sup>B<sup>3</sup>C<sup>6</sup><sub>2</sub> Compounds