Abstract: Wide bandgap semiconductors such as SiC, GaN, and diamond have a potential for use in high power and high frequency devices, while narrow bandgap semiconductors such as the GaSb family have a potential for near- and mid-infrared laser diodes and
photo-detectors for detecting CO2, CH4, NOx, and SOx. In these next-generation semiconductors, it is essential to precisely determine the densities and energy levels of dopants (donors or acceptors) as well as unintentionally-introduced impurities and
defects, which affect the majority-carrier concentrations in semiconductors. We have developed a graphical peak analysis method called Free Carrier Concentration Spectroscopy (FCCS), which can accurately determine them using the temperature dependence of the majority-carrier concentration without any assumptions regarding dopant species, impurities, and defects. We have determined the densities and energy levels in undoped, N-doped or Al-doped SiC. Moreover, the dependence of the energy level of each dopant species on dopant density has been obtained. From the temperature dependence of the majority-carrier concentration in SiC irradiated by high-energy electrons, the dependence of the density of each dopant or defect on fluence has been determined.
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