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Solid State Electronics Research Advances
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$175.50
Authors: Sergo B. Kobadze 
Book Description:
Solid state electronics includes applications of solid-state physics and technology to electronics, including theory and design, measurement techniques, preparation of semiconductor devices, and also materials growth, measurement and evaluation; the physics and modeling of submicron and nanoscale microelectronic devices, including methods of processing, measurement, and evaluation; and applications of numerical methods to the modeling and simulation of solid-state devices and processes. This new book gathers research from around the world in this field.

Table of Contents:
Preface

Expert Commentary

A Design of High-Speed 4-2 Compressor for Fast Multiplier:pp. 1-8
(S.C. Yuan, GanNan Normal Univ., School of Physics and Electronics Engineering, Ganzhou, P.R. China)

Research and Review Studies

Light-Triggered Phenomena in Semiconductor Microwave Devices;pp. 9-59
(Yuo-Hsien Shiau, Dept. of Physics, National Dong Hwa Univ., Hualien, Taiwan, Republic of China)

2D Compact Modeling of Semiconductor Devices by Conformal Mapping Technique;pp. 61-100
(Alexander Kloes, Univ. of Applied Sciences Giessen-Friedberg, Giessen, Germany)

Present S;pp. 101-134
(Christian Monzio Compagnoni, R. Gusmeroli, A.S. Spinelli, Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milano, Italy)

Some Features of Dual Collector Lateral Bipolar Magnetotransistor;pp. 135-184
(Tikhonov R.D., Technological Centre, Moscow Institute of Electronic Engineering (Technical Univ.), Moscow, Russia)

SOI Technology for Harsh Environment Applications;pp. 185-215
(Valeriya Kilchytska, Laurent Vancaillie, Denis Flandre, Univ. Catholique de Louvain (UCL), Microelectronics Laboratory, Louvain-la-Neuve, Belgium)

Recent Progress of Charge-Trapping Flash Memory Devices;pp. 217-245
(Szu-Yu Wang, Inst. of Elec. Eng.,Nat'l Tsing Hua Univ., Hang-Ting Lue, Pei-Ying Du, Erh-Kun Lai, Emerging Central Lab, Macronix Int'l Co.,Ltd.Park, Ling-Wu Yang, Tahone Yang, Technology Development Center, Macronix International Co., Taiwan, Republic of China, Jeng Gong, Institute of Electronics Engineering, National Tsing Hua Univ., Taiwan, Republic of China, Kuang-Chao Chen, Technology Development Ctr., Kuang-Yeu Hsieh, Emerging Central Lab. and Chih-Yuan Lu, Tech. Develpment Ctr.)

Challenges on Semiconductor Device Noise and Linearity Modeling
and Optimization;pp. 247-280
(Qingqing Liang, Semiconductor Research and Development Center, IBM, Hopewell Junction, NY)

Wideband Characterization of SOI Materials and Devices;pp. 281-306
(Jean-Pierre Raskin, Microwave Laboratory, Univ. Catholique de Louvain (UCL), Dimitri Lederer, Tyndall National Institute, Cork, Ireland, Valeria Kilchytska, Microelectronics Laboratory Place du Levant, Louvain-la-Nueve, Belgium)

Recent Developments in the Fabr;pp. 307-320
(Yi Zhou, Minseo Park, John Williams, Dept. of Physics, Auburn Univ., Auburn, AL, Andrew Hanser, Kyma Technologies, Inc., Raleigh, NC)

Controlled Assembly of Clusters;pp. 321-344
(J. G. Patridge, R. Reichel, A. Ayesh, T. Matthewson, D.M.A. Mackenzie, MacDiarmid Institute and NEST Group, Univ. of Canterbury, Christchurch, New Zealand, S.A. Brown, MacDiarmid Institute and NEST Group, Univ. of Canterbury, Christchurch, New Zealand, Nano Cluster Devices Ltd., Univ. of Canterbury, Christchurch, New Zealand)

RF SiGe HBTs: Some New Trends for Low Cost, High Performance and High Power;pp. 345-368
(Mojtaba Joodaki, Hartmut Hillmer, Dept. of Technological Electronics, Institute of Nanostructure Technologies and Analytics (INA), Univ. of Kassel, Kassel, Germany)

Index

   Binding: Hardcover
   Pub. Date: 2008
   Pages: 381 pp.
   ISBN: 1-60021-851-2
   Status: AV
  
Status Code Description
AN Announcing
FM Formatting
PP Page Proofs
FP Final Production
EP Editorial Production
PR At Prepress
AP At Press
AV Available
  
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