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Table of Contents:
Preface
Chapter 1: Novel Device Concepts to Overcome MOSFET Limits
(Ulrich Abelein, Ignaz Eisele, Bundeswehr University Munich, Institute of Physics, Werner-Heisenberg, Neubiberg, Germany) (pp. 1-59)
Chapter 2: Efficient Parallel Monte Carlo Simulations Using Finite Element Tetrahedral Meshes for Novel Thin-Body MOSFET Architectures
(Manuel Aldegunde, Antonio J. Garc'ia-Loureiro, Departamento de Electr'onica y Computaci'on Universidad de Santiago de Compostela, Spain, Natalia Seoane, Karol Kalna, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, United Kingdom) (pp. 61-84)
Chapter 3: Cryogenic Operation of Power MOSFETs
(Hua Ye and Pradeep Haldar, State University of New York at Albany)(pp. 85-114)
Chapter 4: Redesign and Optimization of Semiconductor Devices and Circuits
(Petru Andrei, Florida State University and Florida, A&M University, Tallahassee, FL, USA)(pp. 115-167)
Chapter 5: Thin and Ultra-Thin SiO2 Gate Oxide in Metal-Oxide-Semiconductor Structors Under Electrical Stresses: Reliability Predictions and Degradation Mechanism Models
(C. Petit, D. Zander, Centre de Recherche en Sciences et Technologies de l'Information et de la Communication, CReSTIC, Université de Reims, Reims Cedex, France)(pp. 169-215)
Chapter 6: Some Medical Applications of MOSFETs in Radiation Therapy: Surface Dose and Electron Backscatter Measurements with Monte Carlo Simulations
(James Chun Lam Chow, Radiation Medicine Program, Princess Margaret Hospital, Toronto, Canada, Department of Radiation Oncology, University of Toronto, Toronto, Canada, Department of Physics, University of Waterloo, Waterloo, Canada, Department of Physics, Ryerson University, Toronto, Canada) (pp. 217-251)
Chapter 7: Surrounding-Gate MOSFETs for Transistor Scaling: Devices, Fabrication and Modeling
(Yijian Chen, Applied Materials, Santa Clara, CA, USA) (pp. 253-273)
Chapter 8: Quantum, Self Heating and Hot Electron Effects of Si-Based Double-Gate MOSFET and GaN-Based MOS-HFET
(Xiaoshuang Chen, Weida Hu, Wei Lu, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China)(pp. 275-299)
Chapter 9: Bulk FinFETs: Fabrication and Threshold Voltage
(Jong-Ho Lee, School of EECS, Kyungpook National University, Buk-Gu, Daegu, Korea)(pp. 301-353)
Chapter 10: Discussion on 1/f Noise in CMOS Transistors: Modelling- Simulation and Measurement Techniques
(T. Noulis, S. Siskos, Electronics Laboratory of Physics Department, Aristotle University of Thessaloniki, Aristotle University Campus, Thessaloniki, Greece, L. Bary, G. Sarrabayrouse, LAAS-CNRS, University of Toulouse, Toulouse Cedex, France)(pp. 355-379)
Chapter 11: A Rigorous Analysis of the Parameters Which Govern the Silc in MOSFET's with Oxide Thickness in the 1-2 Nanometer Range
(D. Bauza, G. Ghibaudo, F. Rahmoune, Institut de Microélectronique, Electromagnétisme et Photonique(IMEP), (INP Grenoble, UJF, CNRS), Minatec, Parvis Louis Neel, BP, France)(pp. 381-400)
Chapter 12: Analog and Digital Circuit Functionality Under the Influence of Gate Oxide Degradation and Breakdown
(R. Rodriguez, J. Martin-Martinez, R. Fernández, M. Nafria, X. Aymerich, Departamento d'Enginyeria Electrónica, ETSE, Universitat Autónoma de Barcelona, Bellaterra, Barcellona, Spain)(pp. 401-419)
Chapter 13: MOSFET's Programmable Conductance: The Way of VLSI Implementation for Emerging Applications from Biologically Plausible Neuromorphic Devices to Mobile Communications
(I.S. Han, Institute for Information Technology Covergence Korea Advanced Institute of Science and Technology, Daejeon, Korea(South))(pp. 421-429)
Index |
